Browsing Weitere Einrichtungen by Author "84e3a3d5-9388-44c3-86aa-cd0eb055cc5a"

Browsing Weitere Einrichtungen by Author "84e3a3d5-9388-44c3-86aa-cd0eb055cc5a"

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  • Murphy, J.D.; McGuire, R.E.; Bothe, K.; Voronkov, V.V.; Falster, R.J. (American Institute of Physics Inc., 2014)
    Experiments have been conducted to understand the behaviour of iron in silicon containing oxide precipitates and associated defects (dislocations and stacking faults), which is subjected to phosphorus diffusion gettering. ...
  • Murphy, J.D.; McGuire, R.E.; Bothe, K.; Voronkov, V.V.; Falster, R.J. (London : Elsevier Ltd., 2014)
    Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and ...
  • Niewelt, T.; Steinhauser, B.; Richter, A.; Veith-Wolf, B.; Fell, A.; Hammann, B.; Grant, N.E.; Black, L.; Tan, J.; Youssef, A.; Murphy, J.D.; Schmidt, J.; Schubert, M.C.; Glunz, S.W. (Amsterdam [u.a.] : NH, Elsevier, 2022)
    Characterisation and optimization of next-generation silicon solar cell concepts rely on an accurate knowledge of intrinsic charge carrier recombination in crystalline silicon. Reports of measured lifetimes exceeding the ...
  • Murphy, J.D.; Al-Amin, M.; Bothe, K.; Olmo, M.; Voronkov, V.V.; Falster, R.J. (College Park, MD : American Institute of Physics, 2015)
    Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related extended defects give rise to ...

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