dc.identifier.uri |
http://dx.doi.org/10.15488/13615 |
|
dc.identifier.uri |
https://www.repo.uni-hannover.de/handle/123456789/13725 |
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dc.contributor.author |
Sauter, E.
|
|
dc.contributor.author |
Abrosimov, N.V.
|
|
dc.contributor.author |
Hübner, J.
|
|
dc.contributor.author |
Oestreich, M.
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dc.date.accessioned |
2023-05-10T12:01:33Z |
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dc.date.available |
2023-05-10T12:01:33Z |
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dc.date.issued |
2023 |
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dc.identifier.citation |
Sauter, E.; Abrosimov, N.V.; Hübner, J.; Oestreich, M.: Temperature dependence of the band gap of 28Si:P at very low temperatures measured via time-resolved optical spectroscopy. In: Physical review research 5 (2023), Nr. 1, 013182. DOI: https://doi.org/10.1103/PhysRevResearch.5.013182 |
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dc.description.abstract |
We measure the temperature dependence of the indirect band gap of isotopically purified 28Si:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T4 dependence which is about a factor of two less than observed in previous measurements. Such a T4 dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved 28Si:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds. |
eng |
dc.language.iso |
eng |
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dc.publisher |
College Park, MD : APS |
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dc.relation.ispartofseries |
Physical review research 5 (2023), Nr. 1 |
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dc.rights |
CC BY 4.0 Unported |
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dc.rights.uri |
https://creativecommons.org/licenses/by/4.0/ |
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dc.subject |
Absorption spectroscopy |
eng |
dc.subject |
Electric fields |
eng |
dc.subject |
Electron-phonon interactions |
eng |
dc.subject |
Silicon |
eng |
dc.subject |
Temperature distribution |
eng |
dc.subject.ddc |
530 | Physik
|
ger |
dc.title |
Temperature dependence of the band gap of 28Si:P at very low temperatures measured via time-resolved optical spectroscopy |
eng |
dc.type |
Article |
|
dc.type |
Text |
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dc.relation.essn |
2643-1564 |
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dc.relation.doi |
https://doi.org/10.1103/PhysRevResearch.5.013182 |
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dc.bibliographicCitation.issue |
1 |
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dc.bibliographicCitation.volume |
5 |
|
dc.bibliographicCitation.firstPage |
013182 |
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dc.description.version |
publishedVersion |
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tib.accessRights |
frei zug�nglich |
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