Müller, J.; Bothe, K.; Gatz, S.; Plagwitz, H.; Schubert, G. et al.: Recombination at local aluminum-alloyed silicon solar cell base contacts by dynamic infrared lifetime mapping. In: Energy Procedia 8 (2011), S. 337-342. DOI:
https://doi.org/10.1016/j.egypro.2011.06.146
Zusammenfassung: |
The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the recombination properties and formation of base contacts, which are realized by local laser ablation of a dielectric stack (laser contact opening - LCO) and subsequent full area screen printing of Al paste. Based on charge carrier lifetime measurements using the camera-based and calibration-free dynamic infrared lifetime mapping (ILM) technique, we determine contact recombination velocities at the contacts as low as Scont = 65 cm/s on 200 Ωcm float-zone silicon (FZ-Si) and corresponding reverse saturation current densities of J0,cont = 900 fA/cm2 on 1.5 Ωcm FZ-Si. As a result we show that local contact geometries with point contact radii r > 100 μm and line contact widths a > 80 μm are appropriate for lowest contact recombination employing local Al alloyed contacts. Furthermore, complete and high quality laser ablation of the dielectric stack is necessary for the formation of a sufficiently thick LBSF.
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Lizenzbestimmungen: |
CC BY-NC-ND 3.0 Unported - https://creativecommons.org/licenses/by-nc-nd/3.0/
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Publikationstyp: |
Article |
Publikationsstatus: |
publishedVersion |
Erstveröffentlichung: |
2011 |
Schlagwörter (englisch): |
Carrier lifetime, Laser ablation, Local back surface field, Silicon solar cells, Back surface fields, Charge carrier recombination, Contact geometry, Contact opening, Dielectric stack, Float zone silicon, High quality, Lifetime mapping, Line contact, P-type, Recombination velocity, Reverse-saturation currents, Ablation, Aluminum, Carrier lifetime, Crystalline materials, Laser ablation, Laser applications, Photovoltaic effects, Silicon solar cells, Aluminum alloys
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Fachliche Zuordnung (DDC): |
530 | Physik
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Kontrollierte Schlagwörter: |
Konferenzschrift
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